Slot waveguides with polycrystalline silicon for electrical injection

Publication Type:

Journal Article

Source:

Optics Express, Volume 17, p.1527-1534 (2009)

ISBN:

1094-4087

Abstract:

We demonstrate horizontal slot waveguides using high-index layers of polycrystalline and single crystalline silicon separated by a 10 nm layer of silicon dioxide. We measure waveguide propagation loss of 7 dB/cm and a ring resonator intrinsic quality factor of 83,000. The electric field of the optical mode is strongly enhanced in the low-index oxide layer, which can be used to induce a strong modal gain when an active material is embedded in the slot. Both high-index layers are made of electrically conductive silicon which can efficiently transport charge to the slot region. The incorporation of conductive silicon materials with high-Q slot waveguide cavities is a key step for realizing electrical tunneling devices such as electrically pumped silicon-based light sources. (C) 2009 Optical Society of America

Notes:

Times Cited: 35Preston, Kyle/B-1130-2009
Preston, Kyle/0000-0003-2038-0090
35