High Q SiC microresonators

Publication Type:

Journal Article

Source:

Optics Express, Volume 21, p.16882-16887 (2013)

ISBN:

1094-4087

Abstract:

We demonstrate photonic devices based on standard 3C SiC epitaxially grown on silicon. We achieve high optical confinement by taking advantage of the high stiffness of SiC and undercutting the underlying silicon substrate. We demonstrate a 20 mu m radius suspended microring resonator with Q=14,100 fabricated on commercially available SiC-on-silicon substrates. (C) 2013 Optical Society of America

Notes:

Times Cited: 1010