Deposited low temperature silicon GHz modulator

Publication Type:

Journal Article

Source:

Optics Express, Volume 21, p.26688-26692 (2013)

ISBN:

1094-4087

Abstract:

We demonstrate gigahertz electro-optic modulator fabricated on low temperature polysilicon using excimer laser annealing technique compatible with CMOS backend integration. Carrier injection modulation at 3 Gbps is achieved. These results open up an array of possibilities for silicon photonics including photonics on DRAM and on flexible substrates. (C) 2013 Optical Society of America

Notes:

Times Cited: 3